Sequential infiltration synthesis (SIS) is becoming an important tool for formation of unique nanostructures. SIS is a variant of atomic layer deposition (ALD), in which the organometallic precursors are allowed to diffuse into the polymeric substrate before condensation. In contrast to ALD, the extended diffusion time in SIS potentially allows for extensive penetration into the substrate. An important parameter in SIS is the affinity of precursor with the polymer substrate. Differences in affinity can be exploited, for e.g., for generation of patterned structures within block copolymers. In this project SIS will be used to develop nanostructures with applications in microchip manufacture and optical materials.

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